[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wood et al., 2010 - Google Patents

Terahertz emission from metal-organic chemical vapor deposition grown Fe: InGaAs using 830 nm to 1.55 μm excitation

Wood et al., 2010

Document ID
13438905121147550567
Author
Wood C
Hatem O
Cunningham J
Linfield E
Davies A
Cannard P
Robertson M
Moodie D
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

We demonstrate the generation of broadband terahertz (THz) frequency radiation from photoconductive emitters formed from Fe-doped InGaAs (Fe: InGaAs), grown by metal- organic chemical vapor deposition, following pulsed (femtosecond) laser excitation at …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light using far infra-red light; using Terahertz radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation

Similar Documents

Publication Publication Date Title
Wood et al. Terahertz emission from metal-organic chemical vapor deposition grown Fe: InGaAs using 830 nm to 1.55 μm excitation
Suzuki et al. Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation
Chimot et al. Terahertz radiation from heavy-ion-irradiated In0. 53Ga0. 47As photoconductive antenna excited at 1.55 μm
Hatem et al. Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
Takazato et al. Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
Kübler et al. Ultrabroadband detection of multi-terahertz field transients with GaSe electro-optic sensors: Approaching the near infrared
Dietz et al. 64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions
Takazato et al. Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 μm pulse excitation
Bertulis et al. GaBiAs: A material for optoelectronic terahertz devices
Suzuki et al. Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56 μm femtosecond optical pulses
Preu et al. 1550 nm ErAs: In (Al) GaAs large area photoconductive emitters
Reid et al. Terahertz emission from (100) InAs surfaces at high excitation fluences
Lu et al. Balanced terahertz wave air-biased-coherent-detection
Klatt et al. Photo-Dember terahertz emitter excited with an Er: fiber laser
Hayton et al. Phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser using a room-temperature superlattice harmonic mixer
Yano et al. Terahertz wave detection performance of photoconductive antennas: Role of antenna structure and gate pulse intensity
But et al. Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities
Rämer et al. Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm
Preu et al. Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals
KR20120071382A (en) Generating and detecting radiation
Bacon et al. Gain recovery time in a terahertz quantum cascade laser
Hatem et al. Generation of terahertz radiation from fe-doped InGaAsP using 800 nm to 1550 nm pulsed laser excitation
Ishioka et al. Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces
Danilov et al. Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
Nakajima et al. Competing terahertz radiation mechanisms in semi-insulating InPat high-density excitation