Cho et al., 2012 - Google Patents
Thermoelectric properties of p-type skutterudites YbxFe3. 5Ni0. 5Sb12 (0.8⩽ x⩽ 1)Cho et al., 2012
- Document ID
- 13409517744656329911
- Author
- Cho J
- Ye Z
- Tessema M
- Waldo R
- Salvador J
- Yang J
- Cai W
- Wang H
- Publication year
- Publication venue
- Acta materialia
External Links
Snippet
p-Type skutterudites, with nominal compositions YbxFe3. 5Ni0. 5Sb12 (0.8⩽ x⩽ 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 to 745K to assess their suitability for thermoelectric-based …
- 239000000969 carrier 0 abstract description 41
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
- H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
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