Ernult et al., 2007 - Google Patents
Spin accumulation in metallic nanoparticlesErnult et al., 2007
- Document ID
- 13486151512315628637
- Author
- Ernult F
- Yakushiji K
- Mitani S
- Takanashi K
- Publication year
- Publication venue
- Journal of Physics: Condensed Matter
External Links
Snippet
The rapid development of spin electronics has emphasized the importance of spin accumulation to transport properties and spin manipulation for quantum computing. The latter requires sufficiently long spin-relaxation times, that may be achieved in nanometric …
- 238000009825 accumulation 0 title abstract description 82
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/028—Electrodynamic magnetometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Nikolić et al. | Nonequilibrium spin Hall accumulation in ballistic semiconductor nanostructures | |
Fabian et al. | Semiconductor spintronics | |
Haugen et al. | Spin transport in proximity-induced ferromagnetic graphene | |
Erlingsson et al. | Spin susceptibilities, spin densities, and their connection to spin currents | |
Otani et al. | Manipulation of spin currents in metallic systems | |
Yakushiji et al. | Spin-dependent tunneling and Coulomb blockade in ferromagnetic nanoparticles | |
Guimarães et al. | Spin transport in graphene nanostructures | |
Ernult et al. | Spin accumulation in metallic nanoparticles | |
Wetzels et al. | Noncollinear single-electron spin-valve transistors | |
Nonoguchi et al. | Longitudinal and transverse spin current absorptions in a lateral spin-valve structure | |
Waintal et al. | Tunable magnetic relaxation mechanism in magnetic nanoparticles | |
Pareek et al. | Spin and charge transport in the presence of spin-orbit interaction | |
Lindner | Current-driven magnetization switching and domain wall motion in nanostructures—Survey of recent experiments | |
Chen et al. | Spin transfer in bilayer magnetic nanopillars at high fields as a function of free-layer thickness | |
Pioro-Ladriere et al. | Influence of the long-lived quantum Hall potential on the characteristics of quantum devices | |
Wetzels et al. | Exchange effects on electron transport through single-electron spin-valve transistors | |
Sun et al. | Tuning the stability and the skyrmion Hall effect in magnetic skyrmions by adjusting their exchange strengths with magnetic disks | |
Fallahi et al. | Voltage drop due to longitudinal spin accumulation across the ballistic domain wall | |
Suzuki et al. | Evaluation of scalability for current-driven domain wall motion in a Co/Ni multilayer strip for memory applications | |
RU2367059C1 (en) | Tunnel device | |
Luo et al. | Spin-valve effect of spin-accumulation resistance in a double ferromagnet/superconductor junction | |
Suzuki et al. | Spin-injection phenomena and applications | |
Lee et al. | Roles of adiabatic and nonadiabatic spin transfer torques on magnetic domain wall motion | |
Lone et al. | Anomalous and Topological Hall Resistivity in Ta/CoFeB/MgO Magnetic Systems for Neuromorphic Computing Applications | |
Kervalishvili | Quantum processes in semiconducting materials and spinelectronics |