[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wu et al., 2017 - Google Patents

A linearized wideband low noise amplifier in 65nm CMOS for multi-standard RF communication applications

Wu et al., 2017

Document ID
13321781688539586265
Author
Wu Y
Jin J
El-Sankary K
Publication year
Publication venue
2017 3rd IEEE International Conference on Computer and Communications (ICCC)

External Links

Snippet

In this paper, a wideband low-noise amplifier (LNA) with an improved feedforward distortion cancellation technique is proposed for multi-band and multi-standard RF communication applications. Based on the conventional wideband balun-LNA, the auxiliary path is …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45392—Indexing scheme relating to differential amplifiers the AAC comprising resistors in the source circuit of the AAC before the common source coupling
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors

Similar Documents

Publication Publication Date Title
Kim et al. Broadband balun-LNA employing local feedback g m-boosting technique and balanced loads for low-power low-voltage applications
Kim et al. A 50-MHz–1-GHz 2.3-dB NF noise-cancelling balun-LNA employing a modified current-bleeding technique and balanced loads
CN101647196B (en) Differential amplifier with active post-distortion linearization
US7834698B2 (en) Amplifier with improved linearization
Ghosh et al. A power-efficient receiver architecture employing bias-current-shared RF and baseband with merged supply voltage domains and 1/f noise reduction
Kim et al. A broadband PVT-insensitive all-nMOS noise-canceling balun-LNA for subgigahertz wireless communication applications
Li et al. Linearization of active downconversion mixers at the IF using feedforward cancellation
Park et al. Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8/spl mu/m CMOS technology
Das et al. A four-phase passive mixer-first receiver with a low-power complementary common-gate TIA
Chen et al. A highly linear wideband CMOS LNTA employing noise/distortion cancellation and gain compensation
Tran Ultra low-power low-noise amplifier designs for 2.4 GHz ISM band applications
Abubaker et al. Balun LNA thermal noise analysis and balancing with common-source degeneration resistor
Wu et al. A linearized wideband low noise amplifier in 65nm CMOS for multi-standard RF communication applications
Liu et al. A 2.4 dB NF+ 4.1 dBm IIP3 differential dual-feedforward-based noise-cancelling LNTA with complementary NMOS and PMOS configuration
Duong et al. Low noise transconductance amplifier design for continuous-time ΣΔ wideband frontend
Chaghaei et al. A wideband inductorless LNA employing active complementary current-reuse balun
Tao et al. A compact 0.1–1.95 GHz, 1.5 dB NF LNTA based on cascode inverters
Manstretta A broadband low-noise single-ended input differential output amplifier with IM2 cancelling
Lin et al. A low power CMOS receiver front-end for long term evolution systems
Coccia et al. A TVWS LNTA with balanced output employing a low-noise current multiplier
Ghotbi et al. A wideband balun-LNA for sub-6-GHz 5G NR with multi-mode operation in 22-nm FD-SOI
Geddada et al. Fully balanced low-noise transconductance amplifiers with P1dB> 0dBm in 45nm CMOS
Najari et al. Wideband inductorless LNA employing simultaneous 2 nd and 3 rd order distortion cancellation
Zhu et al. Comparison and IIP2 analysis of two wideband Balun-LNAs designed in 65nm CMOS
Ling et al. Design of CMOS inductor-less LNA with active balun