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Tachi et al., 2007 - Google Patents

Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layer

Tachi et al., 2007

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Document ID
13396389178555699694
Author
Tachi K
Kakushima K
Ahmet P
Tsutsui K
Sugii N
Hattori T
Iwai H
Publication year
Publication venue
ECS Transactions

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Snippet

Electrical characteristics of W/La2O3/Si MOS capacitors have been investigated under various annealing condition. Relatively high interface state densities (Dit) of 1012 cm-2eV-1 observed after annealing at 200 to 500 oC was effectively reduced down to 1011 cm-2eV-1 …
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