[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Kushwaha et al., 2016 - Google Patents

RF modeling of FDSOI transistors using industry standard BSIM-IMG model

Kushwaha et al., 2016

Document ID
1334095097880356493
Author
Kushwaha P
Khandelwal S
Duarte J
Hu C
Chauhan Y
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM- IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Similar Documents

Publication Publication Date Title
Kushwaha et al. RF modeling of FDSOI transistors using industry standard BSIM-IMG model
Scholten et al. Noise modeling for RF CMOS circuit simulation
Chauhan et al. BSIM6: Analog and RF compact model for bulk MOSFET
Servati et al. Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors
Deen et al. High-frequency noise of modern MOSFETs: Compact modeling and measurement issues
Sung et al. Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's
JP3269459B2 (en) MISFET overlap length measuring method, measuring device, and recording medium recording extraction program
Nyssens et al. Self-heating in FDSOI UTBB MOSFETs at cryogenic temperatures and its effect on analog figures of merit
Jin et al. A physical thermal noise model for SOI MOSFET
Jarndal et al. Hybrid small‐signal model parameter extraction of GaN HEMTs on Si and SiC substrates based on global optimization
Zhang et al. Novel physics-based small-signal modeling and characterization for advanced RF bulk FinFETs
Tang et al. Cryogenic CMOS RF device modeling for scalable quantum computer design
Liu et al. A novel small-signal model for bulk FinFETs accommodating self-heating behaviors
Ong et al. Substrate-induced noise model and parameter extraction for high-frequency noise modeling of sub-micron MOSFETs
Gupta et al. BSIM-BULK: Accurate compact model for analog and RF circuit design
Crupi et al. Microwave noise modeling of FinFETs
Zárate-Rincón et al. Modeling the impact of multi-fingering microwave MOSFETs on the source and drain resistances
Wu et al. An improved surface-potential-based model for MOSFETs considering the carrier Gaussian distribution
Lee et al. High-frequency characterization and modeling of distortion behavior of MOSFETs for RF IC design
Daghighi Output-conductance transition-free method for improving the radio-frequency linearity of silicon-on-insulator MOSFET circuits
Gogineni et al. Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices
Wu et al. Temperature-dependent threshold voltage extraction of FinFETs using noise measurements
CN109841613B (en) Generating a model of a dynamically depleted transistor using a system with analog circuitry
Chen et al. Equivalent sheet resistance of intrinsic noise in sub-100-nm MOSFETs
Dabhi et al. Modeling of induced gate thermal noise including back-bias effect in FDSOI MOSFET