Sian, 2020 - Google Patents
Low SEY Surfaces for future particle acceleratorsSian, 2020
- Document ID
- 13210481944202642928
- Author
- Sian B
- Publication year
- Publication venue
- PQDT-Global
External Links
Snippet
Abstract Beam Induced Electron Multipacting (BIEM) and the Electron cloud (e-cloud) are a severe problem for many existing and future high intensity charged particle accelerators, such as the LHC, KEKB, ILC, CLIC, RHIC, and FCC. Secondary electrons play a key role in …
- 239000002245 particle 0 title abstract description 74
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Renk et al. | Materials modification using intense ion beams | |
Soh et al. | Shadowgraphic studies of DLC film deposition process in dense plasma focus device | |
Zeb et al. | Deposition of diamond-like carbon film using dense plasma focus | |
Ahmad et al. | Study of lateral spread of ions emitted from 2.3 kJ plasma focus with hydrogen and nitrogen gases | |
Sian | Low SEY Surfaces for future particle accelerators | |
Yin Vallgren | Low secondary electron yield carbon coatings for electron cloud mitigation in modern particle accelerators | |
Scheer et al. | High negative ion yield from light molecule scattering | |
Lebedev et al. | Calculation of the lifetimes of thin stripper targets under bombardment of intense pulsed ions | |
Wang | Secondary electron yield measurements of anti-multipacting surfaces for accelerators | |
Torrisi et al. | An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas | |
Das et al. | Carbon coatings for fusion applications | |
Láska et al. | Laser induced direct implantation of ions | |
Lorkiewicz et al. | Coating in ultra-high vacuum cathodic-arc and processing of Pb films on Nb substrate as steps in preparation of Nb-Pb photocathodes for radio-frequency, superconducting e− guns | |
Ayrapetov et al. | Stand for coating deposition and coating/materials testing | |
Zameroski et al. | Secondary electron yield measurements from materials with application to collectors of high-power microwave devices | |
Woller | Characterization of the dynamic formation of nano-tendril surface morphology on tungsten while exposed to helium plasma | |
Malyshev | Non-evaporable getter (NEG)-coated vacuum chamber | |
Baglin et al. | Beam-Induced Electron Multipacting, Electron Cloud, and Vacuum Design | |
Tatarintsev et al. | Electrizaton and cathodoluminescence of single crystal MgO under 2.5–15 keV electron beam | |
Kaminsky | Surface effects in controlled thermonuclear fusion | |
Cimino | Interaction between beams and vacuum system walls | |
JP2015149279A (en) | Plasma source, ion source and method of ion generation | |
Bilgen | Dynamic pressure in particle accelerators: experimental measurements and simulation for the LHC | |
Shahriari et al. | Investigation of spatial distribution of hydrogen and argon ions and effects of them on aluminum samples in a 2.5 kJ mater type plasma focus device | |
Sasao et al. | Plasma Electrode for Cesium-Free Negative Hydrogen Ion Sources |