[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Doerr et al., 1998 - Google Patents

Multifrequency laser having integrated amplified output coupler for high-extinction-ratio modulation with single-mode behavior

Doerr et al., 1998

Document ID
13037442903687614557
Author
Doerr C
Joyner C
Gripp J
Publication year
Publication venue
IEEE Photonics Technology Letters

External Links

Snippet

We present a 16-channel waveguide grating router multifrequency laser that can be modulated with a 250-MHz bandwidth, a 50-dB extinction ratio, and constant single-mode behavior. We demonstrate a means for immunizing the singlemode lasing against unwanted …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06754Fibre amplifiers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06256Controlling the frequency of the radiation with DBR-structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/146External cavity lasers using a fiber as external cavity
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125Distributed Bragg reflector lasers (DBR-lasers)
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/1063Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S3/00Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/30Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING STIMULATED EMISSION
    • H01S2301/00Functional characteristics

Similar Documents

Publication Publication Date Title
Zhou et al. A widely tunable narrow linewidth semiconductor fiber ring laser
US6055250A (en) Multifrequency laser having reduced wave mixing
Mason et al. Directly modulated sampled grating DBR lasers for long-haul WDM communication systems
Shi et al. Characterization of a tunable three-section slotted Fabry–Perot laser for advanced modulation format optical transmission
Suche et al. Efficient Q-switched Ti: Er: LiNbO3 waveguide laser
Sato et al. Frequency range extension of actively mode-locked lasers integrated with electroabsorption modulators using chirped gratings
Takabayashi et al. Widely (132 nm) wavelength tunable laser using a semiconductor optical amplifier and an acousto-optic tunable filter
Forrester et al. 39.81 Gbits/s, 43.8 million-way WDM broadcast network with 527 km range
Morton et al. Packaged hybrid soliton pulse source results 70 terabit. km/sec soliton transmission
Doerr et al. Multifrequency laser having integrated amplified output coupler for high-extinction-ratio modulation with single-mode behavior
Libatique et al. Precisely and rapidly wavelength-switchable narrow-linewidth 1.5-μm laser source for wavelength division multiplexing applications
WO2003043146A1 (en) Distributed feedback laser for isolator-free operation
JP2023525264A (en) Semiconductor mode-locked laser dual comb system
Zirngibl et al. Characterization of a multiwavelength waveguide grating router laser
Doerr et al. Wavelength selectable laser with inherent wavelength and single-mode stability
De Valicourt et al. Integrated ultra-wide band wavelength-tunable hybrid external cavity silicon-based laser
Zhao et al. Precise and rapid wavelength-switching of fibre laser using semiconductor optical amplifier
US11522339B2 (en) Method for narrowing the linewidth of a single mode laser by injecting optical feedback into the laser cavity through both laser cavity mirrors
Murtaza et al. Dual mirror and resonant cavity operating at 1.3 and 1.55 µm
WO2004073123A1 (en) Multi-wavelength mode-locked laser source
Laurent et al. Double external cavity laser diode for DWDM applications
Morton et al. Hybrid soliton pulse source using a silica waveguide external cavity and Bragg reflector
Doerr et al. Simultaneous CW operation of shared angular dispersive element WDM lasers
Doerr et al. Multifrequency laser with reduced intracavity wave mixing
Sahara et al. Isolator-free transmission at 2.5 Gbits/s over 100 km of single-mode fiber by a 1.55-/spl mu/m, AlGaInAs strained-multi-quantum-well, directly modulated distributed-feedback laser diode