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Chen et al., 2023 - Google Patents

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F 2 Area Cost

Chen et al., 2023

Document ID
13084164331626999154
Author
Chen C
Xiang J
Duan X
Lu C
Niu J
Zhang K
Liu Y
Lu N
Jiao Z
Shen Y
Luan Q
Wang G
Zhao C
Yang G
Geng D
Li L
Liu M
Publication year
Publication venue
2023 International Electron Devices Meeting (IEDM)

External Links

Snippet

For the first time, we have realized the vertical-stacked 4F 2 2T0C DRAM cell constructed by two-layers of Channel-All-Around (CAA) IGZO FETs. The devices fabrication process is BEOL-compatible with the process temperature< 250° C. The influences of monolithic stack …
Continue reading at ieeexplore.ieee.org (other versions)

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