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Choi et al., 2018 - Google Patents

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Choi et al., 2018

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Document ID
12934240417194313525
Author
Choi F
Griffiths J
Ren C
Lee K
Zaidi Z
Houston P
Guiney I
Humphreys C
Oliver R
Wallis D
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

Control of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN …
Continue reading at eprints.whiterose.ac.uk (PDF) (other versions)

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