[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Baron, 1998 - Google Patents

Silicon avalanche photodiodes (APDs) for time-resolved x-ray measurements

Baron, 1998

Document ID
12980294094973396397
Author
Baron A
Publication year
Publication venue
Time Structure of X-Ray Sources and Its Applications

External Links

Snippet

We provide a general introduction to the use of silicon avalanche photo-diodes (APDs) for x- ray timing measurements. We describe (and compare) some devices available from various manufacturers. In general, time resolutions of approximately 1 ns are typical, and pulse …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/24Measuring radiation intensity with semiconductor detectors
    • G01T1/241Electrode arrangements, e.g. continuous or parallel strips or the like
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/20Measuring radiation intensity with scintillation detectors
    • G01T1/2018Scintillation-photodiode combination
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914Measurement of spatial distribution of radiation
    • G01T1/2921Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14658X-ray, gamma-ray or corpuscular radiation imagers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/02Dosimeters
    • G01T1/026Semiconductor dose-rate meters

Similar Documents

Publication Publication Date Title
Baron Detectors for nuclear resonant scattering experiments
US10578752B2 (en) Multiple energy detector
Verger et al. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications
Baron et al. Silicon avalanche photodiodes for direct detection of X-rays
US5892227A (en) Radiation detection system and processes for preparing the same
US6933503B2 (en) Imaging X-ray detector based on direct conversion
Bolotnikov et al. An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras
US20230343809A1 (en) X-ray detectors based on an epitaxial layer and methods of making
Ponpon Semiconductor detectors for 2D X-ray imaging
Kuvvetli et al. CZT drift strip detectors for high energy astrophysics
Polichar et al. Application of monolithic CdZnTe linear solid state ionization detectors for X-ray imaging
Weilhammer et al. Recent results on CVD diamond radiation sensors
US20060118728A1 (en) Wafer bonded silicon radiation detectors
Wang et al. Gigahertz (GHz) hard X-ray imaging using fast scintillators
Baron Silicon avalanche photodiodes (APDs) for time-resolved x-ray measurements
Jagutzki et al. A position-and time-sensitive photon-counting detector with delay-line read-out
Caroli et al. A focal plane detector design for a wide-band Laue-lens telescope
Johnson et al. New developments for CMOS SSPMs
RU220064U1 (en) SEMICONDUCTOR X-RAY DETECTOR WITH HIGH ENERGY RESOLUTION
Alruhaili et al. Development of a CZT drift ring detector for x and γ ray spectroscopy
Moffat et al. A novel detector for low-energy photon detection with fast response
Goldan et al. Amorphous selenium detector utilizing a Frisch grid for photon-counting imaging applications
Shah et al. X-ray imaging with semiconductor films
Olschner Silicon drift photodiode array detectors
Dabrowski et al. Recent advances with mercuric iodide x-ray detectors and large-area silicon avalanche photodiodes