[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Sultan et al., 1972 - Google Patents

Punchthrough oscillator—new microwave solid-state source

Sultan et al., 1972

Document ID
12728670529836175855
Author
Sultan N
Wright G
Publication year
Publication venue
Electronics Letters

External Links

Snippet

The performances of silicon pnp punchthrough oscillators have been studied experimentally at X band in a coaxial cavity. A range of mechanical tuning of more than 3 GHz has been obtained. The oscillator performance at current densities up to about 200 A/cm has been …
Continue reading at digital-library.theiet.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION

Similar Documents

Publication Publication Date Title
Sze et al. Microwave avalanche diodes
Midford et al. Millimeter-wave CW IMPATT diodes and oscillators
Seidel et al. Double-drift-region ion-implanted millimeter-wave IMPATT diodes
Ruegg An optimized avalanche photodiode
Burrus et al. Improved very-high-speed packaged InGaAs PIN punch-through photodiode
Fong et al. Millimeter-wave pulsed IMPATT sources
Sultan et al. Punchthrough oscillator—new microwave solid-state source
US3628185A (en) Solid-state high-frequency source
Acharyya et al. Analysis of photo-irradiated double-drift region silicon impact avalanche transit time devices in the millimeter-wave and terahertz regime
Niehaus et al. Double-drift IMPATT diodes near 100 GHz
Lee et al. A 50-GHz silicon IMPATT diode oscillator and amplifier
Acharyya et al. Optical control of millimeter-wave lateral double-drift region silicon IMPATT device
Hayama et al. 1/f noise reduction in self-aligned AlGaAs/GaAs HBT with AlGaAs surface passivation layer
Harth et al. Frequency response of GaAlAs light-emitting diodes
US4954864A (en) Millimeter-wave monolithic diode-grid frequency multiplier
Weller et al. Millimeter IMPATT sources for the 130-170-GHz range
Temkin et al. Very high speed operation of planar InGaAs/InP photodiode detectors
Liu et al. and P-N-etal Microwave Diodes
JP2004518279A (en) Optically powered resonant tunneling device
Wang et al. Monolithically integrated Gunn oscillator at 35 GHz
Mukherjee et al. Avalanche and drift layer contributions to the negative resistance of millimetre wave p+ nn+ InP IMPATT diode for different current densities
Fukatsu Parametric effects in a microwave Read avalanche diode
RU2364008C2 (en) Transistor and method of making said transistor
Eisele et al. GAAs IMPATT DIODES FOR FREQUENCIES ABOVE 100 Gift: TECHNOLOGY AND PERFORMANCE
Nishizawa et al. 200 GHz TUNNETT diodes