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Kim et al., 2017 - Google Patents

Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics

Kim et al., 2017

Document ID
12723044246670695105
Author
Kim D
Choi J
Publication year
Publication venue
Organic Electronics

External Links

Snippet

In this paper, organic light-emitting field effect transistors (OLEFETs) operating at low voltages| V op| below 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfO x dielectrics prepared …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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