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Gilmer et al., 2002 - Google Patents

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Gilmer et al., 2002

Document ID
12604691571881063025
Author
Gilmer D
Hegde R
Cotton R
Garcia R
Dhandapani V
Triyoso D
Roan D
Franke A
Rai R
Prabhu L
Hobbs C
Grant J
La L
Samavedam S
Taylor B
Tseng H
Tobin P
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Polycrystalline-silicon poly-Si gate compatibility issues with HfO2 and Al2O3 capped HfO2 gate dielectrics are reported. It can be generally stated that chemical vapor deposition CVD silicon gates using silane deposited directly onto HfO2 results in electrical properties much …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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