[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Cho et al., 2011 - Google Patents

Thermoelectric properties and investigations of low thermal conductivity in Ga-doped Cu 2 GeSe 3

Cho et al., 2011

View PDF
Document ID
12552000469203171258
Author
Cho J
Shi X
Salvador J
Meisner G
Yang J
Wang H
Wereszczak A
Zhou X
Uher C
Publication year
Publication venue
Physical Review B—Condensed Matter and Materials Physics

External Links

Snippet

In this study, we synthesized a series of low thermal conductivity diamondlike materials with the general formula Cu 2 Ga x Ge 1− x Se 3 for 0≤ x≤ 0.1, and their transport properties were evaluated to establish their suitability for thermoelectric-based waste heat recovery …
Continue reading at link.aps.org (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12Selection of the material for the legs of the junction
    • H01L35/14Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12Selection of the material for the legs of the junction
    • H01L35/14Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/18Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

Similar Documents

Publication Publication Date Title
Cho et al. Thermoelectric properties and investigations of low thermal conductivity in Ga-doped Cu 2 GeSe 3
Bux et al. Glass-like lattice thermal conductivity and high thermoelectric efficiency in Yb 9 Mn 4.2 Sb 9
Kanno et al. Enhancement of average thermoelectric figure of merit by increasing the grain-size of Mg3. 2Sb1. 5Bi0. 49Te0. 01
Bhardwaj et al. Enhancing thermoelectric properties of a p-type Mg 3 Sb 2-based Zintl phase compound by Pb substitution in the anionic framework
Zevalkink et al. Thermoelectric properties of Sr 3 GaSb 3–a chain-forming Zintl compound
Mi et al. Multitemperature crystal structures and physical properties of the partially filled thermoelectric skutterudites M 0.1 Co 4 Sb 12 (M= La, Ce, Nd, Sm, Yb, and Eu)
Ponnambalam et al. On the thermoelectric properties of Zintl compounds Mg 3 Bi 2− x Pn x (Pn= P and Sb)
Xiao et al. Enhanced thermoelectric figure of merit in p-type Bi 0.48 Sb 1.52 Te 3 alloy with WSe 2 addition
Skoug et al. Improved thermoelectric performance in Cu-based ternary chalcogenides using S for Se substitution
Zhu et al. Improved thermoelectric performance in n-type BiTe facilitated by defect engineering
Guo et al. Thermoelectric transport properties and crystal growth of BiSbTe 3 bulk materials produced by a unique high-pressure synthesis
US8795545B2 (en) Thermoelectric materials having porosity
Liu et al. BiCuSeO as state-of-the-art thermoelectric materials for energy conversion: from thin films to bulks
Fang et al. A new defective 19-electron TiPtSb half-Heusler thermoelectric compound with heavy band and low lattice thermal conductivity
Hu et al. The effect of Ni/Sn doping on the thermoelectric properties of BiSbTe polycrystalline bulks
Li et al. Thermoelectric anisotropy of n-type Bi 2 Te 3− x Se x prepared by spark plasma sintering
Vaney et al. Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α-As2Te3–x Se x (0≤ x≤ 1.5)
Liu et al. Effects of sintering temperature on microstructure and thermoelectric properties of Ce-filled Fe 4 Sb 12 skutterudites
Dong et al. Crystal structure and high temperature transport properties of Yb-filled p-type skutterudites YbxCo2. 5Fe1. 5Sb12
Kang et al. High pressure synthesis and thermoelectric properties of Ba-filled CoSb 3 skutterudites
Wang et al. Ni substitution improves the high-temperature thermoelectric performance of electronegative element Se-filled skutterudite Se0. 05NixCo4-xSb12
Peng et al. Synthesis and thermoelectric properties of the double-filled skutterudite Yb 0.2 In y Co 4 Sb 12
Han et al. Effect of Chromium Doping on the Thermoelectric Properties of Bi 2 Te 3: Cr x Bi 2 Te 3 and Cr x Bi 2− x Te 3
Wang et al. Crystal structure modulation of SnSe thermoelectric material by AgBiSe2 solid solution
Feng et al. Porous thermoelectric zintl: YbCd2Sb2