[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Sun et al., 2016 - Google Patents

Active dv/dt control of 600V GaN transistors

Sun et al., 2016

Document ID
12390930021106511820
Author
Sun B
Burgos R
Zhang X
Boroyevich D
Publication year
Publication venue
2016 IEEE Energy Conversion Congress and Exposition (ECCE)

External Links

Snippet

With the fast-switching devices like GaN HEMT applying in power converters, the converters achieve higher switching frequency, higher efficiency and higher power density. As a result of the fast switching edge and high commutation speed, the issues like electromagnetic …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H02M2001/346—Passive non-dissipative snubbers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Similar Documents

Publication Publication Date Title
Sun et al. Active dv/dt control of 600V GaN transistors
Lobsiger et al. Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control
Grbovic An IGBT gate driver for feed-forward control of turn-on losses and reverse recovery current
Park et al. Flexible dv/dt and di/dt control method for insulated gate power switches
Liu et al. Modeling and analysis of SiC MOSFET switching oscillations
Chen et al. Closed-loop gate drive for high power IGBTs
Wang et al. Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs
Huang et al. A switching ringing suppression scheme of SiC MOSFET by active gate drive
Liu et al. Equivalent circuit models and model validation of SiC MOSFET oscillation phenomenon
Lobsiger et al. Stability and robustness analysis of d/dt-closed-loop IGBT gate drive
Dymond et al. Reduction of oscillations in a GaN bridge leg using active gate driving with sub-ns resolution, arbitrary gate-resistance patterns
Shojaie et al. Design of an all-GaN bidirectional DC-DC converter for medium voltage DC ship power systems using series-stacked GaN modules
Hatua Current controlled active gate driver for 1200V SiC MOSFET
Shu et al. A voltage controlled current source gate drive method for IGBT devices
Wang et al. Investigation of driver circuits for GaN HEMTs in leaded packages
Vechalapu et al. Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications
Beushausen et al. GaN-based active gate-drive unit with closed-loop du/dt-control for IGBTs in medium-voltage applications
Bi et al. A novel driver circuit on crosstalk suppression in SiC MOSFETs
Zhu et al. Turn-on oscillation damping for hybrid IGBT modules
Trung et al. Ringing suppressing method in 13.56 MHz resonant inverter for wireless power transfer systems
Chen et al. A novel method for current balancing between parallel-connected IGBTs
Abuogo et al. Analysis of oscillation mechanism during turn-on of SiC MOSFET
Wang et al. Instability analysis of enhancement-mode GaN based half-bridge circuits
Tan et al. Investigation of optimal IGBT switching behaviours under advanced gate control
Elrajoubi et al. Design and evaluation of a high-current gate driver circuit for six paralleled 1.2 kV 36A SiC MOSFETs