[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Liao et al., 2023 - Google Patents

Van der waals ferroelectric semiconductor field effect transistor for in-memory computing

Liao et al., 2023

Document ID
12356706142772578461
Author
Liao J
Wen W
Wu J
Zhou Y
Hussain S
Hu H
Li J
Liaqat A
Zhu H
Jiao L
Zheng Q
Xie L
Publication year
Publication venue
ACS nano

External Links

Snippet

In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, ie, reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we …
Continue reading at pubs.acs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Similar Documents

Publication Publication Date Title
Jin et al. Ferroelectrics-integrated two-dimensional devices toward next-generation electronics
Liao et al. Van der waals ferroelectric semiconductor field effect transistor for in-memory computing
Singh et al. Two-dimensional CIPS-InSe van der Waal heterostructure ferroelectric field effect transistor for nonvolatile memory applications
Si et al. Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure
Si et al. Asymmetric metal/α-In2Se3/Si crossbar ferroelectric semiconductor junction
Luo et al. Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing
Shen et al. Two-dimensional ferroelectric tunnel junction: the case of monolayer In: SnSe/SnSe/Sb: SnSe homostructure
Tian et al. A dynamically reconfigurable ambipolar black phosphorus memory device
Zhao et al. Nonvolatile reconfigurable 2D Schottky barrier transistors
Park et al. Nonvolatile and neuromorphic memory devices using interfacial traps in two-dimensional WSe2/MoTe2 stack channel
Wu et al. Multifunctional half-floating-gate field-effect transistor based on MoS2–BN–graphene van der Waals heterostructures
Berweger et al. Imaging carrier inhomogeneities in ambipolar tellurene field effect transistors
Zhang et al. Room-temperature ferroelectricity in group-IV metal chalcogenide nanowires
Zhao et al. Strong temperature effect on the ferroelectric properties of CuInP2S6 and its heterostructures
Yang et al. Reconfigurable physical reservoir in GaN/α-In2Se3 HEMTs enabled by out-of-plane local polarization of ferroelectric 2D layer
Wan et al. Nonvolatile ferroelectric memory with lateral β/α/β In2Se3 heterojunctions
Sheng et al. Reconfigurable logic-in-memory computing based on a polarity-controllable two-dimensional transistor
Kim et al. Tuning polarity in WSe2/AlScN FeFETs via contact engineering
Li et al. Intrinsic memristive mechanisms in 2D layered materials for high-performance memory
Yang et al. Two-dimensional layered materials meet perovskite oxides: a combination for high-performance electronic devices
Chen et al. Polarized tunneling transistor for ultrafast memory
He et al. The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices
Sharma et al. Specific conductivity of a ferroelectric domain wall
Li et al. High-performance C60 coupled ferroelectric enhanced MoS2 nonvolatile memory
Pujar et al. Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices