Bengochea, 2018 - Google Patents
Slurry Assay and Flow Characterization in Chemical Mechanical PlanarizationBengochea, 2018
- Document ID
- 12239046756219803700
- Author
- Bengochea L
- Publication year
External Links
Snippet
This thesis includes three studies which, even if independent of one another, have the same underlying goal: optimization of slurry use in chemical mechanical planarization (CMP). Slurry is one of the major concerns in CMP, both for economical and environmental reasons …
- 239000002002 slurry 0 title abstract description 205
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means, e.g. by light scattering, diffraction, holography or imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Pate et al. | Chemical metrology methods for CMP quality | |
TWI747990B (en) | Methods and apparatus for detection and analysis of nanoparticles from semiconductor chamber parts | |
US8460507B2 (en) | CMP sensor and control system | |
Cheong et al. | Holographic characterization of colloidal particles in turbid media | |
KR20110028261A (en) | In-line effluent analysis method and appratus for cmp process control | |
Sun et al. | Investigating effect of conditioner aggressiveness on removal rate during interlayer dielectric chemical mechanical planarization through confocal microscopy and dual emission ultraviolet-enhanced fluorescence imaging | |
Bengochea | Slurry Assay and Flow Characterization in Chemical Mechanical Planarization | |
Rosales-Yeomans et al. | Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarization | |
Rahman et al. | Effect of particle concentration and turbidity on particle characterization using digital holography | |
Li et al. | Effects of disk design and kinematics of conditioners on process hydrodynamics during copper CMP | |
Williams et al. | Using quantum dots to evaluate subsurface damage depths and formation mechanisms in glass | |
Egan et al. | Effect of controlling abrasive size in slurry for tungsten contact CMP process | |
JP2000135673A (en) | Polishing end point detecting method and polishing end point detecting device of wafer | |
Zazzera et al. | Single Particle Inductively Coupled Plasma Mass Spectrometry Study of Ceria Nanoparticle Size Distribution from Oxide CMP with Microreplicated Pads | |
Han | Fundamental Characterization of Chemical Mechanical Planarization Relating Tto Slurry Dispensing and Conditioning Method | |
Stuffle | Novel Pad Conditioning and Slurry Dispense Methods in Chemical Mechanical Planarization | |
Borst et al. | Chemical-mechanical planarization of low-k polymers for advanced IC structures | |
McAllister | Novel Studies in Silicon Dioxide, Copper and Tungsten Chemical Mechanical Planarization Processes Relating to Pad Conditioning and Micro-Texture, Slurry Nanoparticles, Tribology and Kinetics | |
Sherry | Characterizing CeO2 Valence State Influence on TEOS Interactions during Shallow Trench Isolation Chemical Mechanical Planarization | |
Mariscal | Novel Studies in Silicon Dioxide, Tungsten and Shallow-Trench Isolation Chemical Mechanical Planarization Processes Relating to Pad Micro-Texture, Conditioning Disc Type and Age, Tribology, Fluid Dynamics and Kinetics | |
Rosales-Yeomans | Evaluation and modeling of novel groove pad designs on inter-layer dielectric and copper chemical mechanical planarization | |
Ng et al. | Nanoparticulate and interfacial mechanics in confined geometries typical of chemical-mechanical planarization | |
Jiao | Wear and contact phenomena in existing and future large-scale chemical mechanical planarization processes | |
JP2024118675A (en) | Evaluation device and evaluation method | |
Mu | Slurry mean residence time analysis and pad-wafer contact characterization in chemical mechanical planarization |