Breen, 2017 - Google Patents
Aluminum nitride microelectromechanical infrared detectors with integrated metamaterial absorbersBreen, 2017
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- 12261703538669253479
- Author
- Breen M
- Publication year
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This work reports the development of uncooled spectrally selective mid-infrared (IR) detectors based on the seamless integration of metamaterial (MM) structures with microelectromechanical (MEMS) AlN resonators. Historically, uncooled absorbers have …
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride 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[Al]#N 0 title abstract description 37
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/10—Radiation pyrometry using electric radiation detectors
- G01J5/20—Radiation pyrometry using electric radiation detectors using resistors, thermistors, or semi-conductors sensitive to radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/08—Optical features
- G01J5/0803—Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/02—Details
- G01J5/04—Casings Mountings
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry
- G01J5/38—Radiation pyrometry using extension or expansion of solids or fluids
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
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