[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Friedman et al., 2019 - Google Patents

Electron reflectometry for measuring nanostructures on opaque substrates

Friedman et al., 2019

View HTML
Document ID
11628290840876733331
Author
Friedman L
Wu W
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Here, we present a method for measuring dimensions of nanostructures using specular reflection of electrons from an electronically opaque surface. Development of this method has been motivated by measurement needs of the semiconductor industry [International …
Continue reading at www.ncbi.nlm.nih.gov (HTML) (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam
    • G01N23/2251Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam
    • G01N23/2252Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by measuring secondary emission using electron or ion microprobe or incident electron or ion beam with incident electron beam and measuring excited X-rays
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • G01N21/23Bi-refringence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/57Measuring gloss
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/24Measuring arrangements characterised by the use of optical means for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/30Measuring arrangements characterised by the use of optical means for measuring roughness or irregularity of surfaces
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by using diffraction of the radiation, e.g. for investigating crystal structure; by using reflection of the radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/40Caliper-like sensors
    • G01B2210/44Caliper-like sensors with detectors on both sides of the object to be measured

Similar Documents

Publication Publication Date Title
Stahn et al. Focusing specular neutron reflectometry for small samples
JP5719019B2 (en) Method for determining the performance of a photolithographic mask
JP2002532696A (en) Method and apparatus for optically controlling the manufacturing process of a microstructured surface in semiconductor manufacturing
JP2002540422A (en) High-speed measurement device for angle-dependent diffraction effects on microstructured surfaces
Siewert et al. Linear chirped slope profile for spatial calibration in slope measuring deflectometry
US20200312613A1 (en) Method and apparatus for determining a wavefront of a massive particle beam
JP2020512563A (en) Apparatus and method for scanning probe microscope
US12105415B2 (en) Method, apparatus and computer program for analyzing and/or processing of a mask for lithography
Harada et al. Defect characterization of an extreme-ultraviolet mask using a coherent extreme-ultraviolet scatterometry microscope
Friedman et al. Electron reflectometry for measuring nanostructures on opaque substrates
US7884936B2 (en) Apparatus and methods for scattering-based semiconductor inspection and metrology
US20020191179A1 (en) Measurement of surface defects
Sato et al. Advanced sensing and machine learning technologies for intelligent measurement in smart and precision manufacturing
Jeong et al. At-wavelength detection of extreme ultraviolet lithography mask blank defects
Wang et al. Design of a novel monolithic parabolic-mirror ion-trap to precisely align the RF null point with the optical focus
US6414325B1 (en) Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial unevenness on the surface of exposed specimen
Zhuang et al. Noncontact laser sensor for pipe inner wall inspection
Skroblin et al. Challenges of grazing emission X-ray fluorescence (GEXRF) for the characterization of advanced nanostructured surfaces
JPH06160314A (en) Method and apparatus for surface analysis
JP5751514B2 (en) Sphere diameter measuring method and measuring device
Shimamura et al. Fabrication of ultrashort sub-meter-radius x-ray mirrors using dynamic stencil deposition with figure correction
Yang et al. New surface slope profiler with sub-millimeter spatial resolution
Liu et al. Silicon wafer analysis by non‐monochromatic total reflection x‐ray fluorescence analysis.
JP5055607B2 (en) Charged particle beam writing method using charged particle beam writing apparatus
CN220084691U (en) Optical measuring device