[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Boettcher et al., 2007 - Google Patents

Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies

Boettcher et al., 2007

Document ID
11640384266258009441
Author
Boettcher S
Strandwitz N
Schierhorn M
Lock N
Lonergan M
Stucky G
Publication year
Publication venue
Nature materials

External Links

Snippet

Interfaces between nanoscale and bulk electroactive materials are important for the design of electronic devices using solution-processed nanoparticles. We report that thin films of hexanethiolate-capped gold nanoparticles with a core diameter of 2.1±0.4 nm deposited …
Continue reading at www.nature.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048Carbon nanotubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Similar Documents

Publication Publication Date Title
Boettcher et al. Tunable electronic interfaces between bulk semiconductors and ligand-stabilized nanoparticle assemblies
Aragonès et al. Single-molecule electrical contacts on silicon electrodes under ambient conditions
Trasobares et al. A 17 GHz molecular rectifier
Yu et al. Self-assembled 2D WSe2 thin films for photoelectrochemical hydrogen production
Yu et al. Single crystal hybrid perovskite field-effect transistors
Newaz et al. Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
Chen et al. Metal–insulator transition in films of doped semiconductor nanocrystals
Yan et al. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Farmer et al. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors
Gittins et al. A nanometre-scale electronic switch consisting of a metal cluster and redox-addressable groups
Xia et al. Measurement of the quantum capacitance of graphene
Janata et al. Conducting polymers in electronic chemical sensors
Waldmann et al. Bottom-gated epitaxial graphene
Jiang et al. Quantum and electrochemical interplays in hydrogenated graphene
Lv et al. Tunable nonvolatile memory behaviors of PCBM–MoS2 2D nanocomposites through Surface deposition ratio control
Feng et al. One-dimensional van der Waals heterojunction diode
Reed et al. The electrical measurement of molecular junctions
Zhou et al. Solution processed molecular floating gate for flexible flash memories
Wang et al. Fabrication of single-walled carbon nanotube/Si heterojunction solar cells with high photovoltaic performance
Bergren et al. Analytical chemistry in molecular electronics
Septianto et al. On-demand tuning of charge accumulation and carrier mobility in quantum dot solids for electron transport and energy storage devices
Gutiérrez-Lezama et al. Ionic gate spectroscopy of 2D semiconductors
Kim et al. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer
Kim et al. Enhanced surface-and-interface coupling in Pd-nanoparticle-coated LaAlO3/SrTiO3 heterostructures: strong gas-and photo-induced conductance modulation
Abayev et al. Properties of the electronic density of states in TiO 2 nanoparticles surrounded with aqueous electrolyte