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Komaragiri, 2019 - Google Patents

Introduction to High Electron Mobility Transistors

Komaragiri, 2019

Document ID
11593886498019536305
Author
Komaragiri R
Publication year
Publication venue
Handbook for III-V High Electron Mobility Transistor Technologies

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Snippet

High electron mobility transistors utilize quantum phenomenon to conduct charge. At the interface of a type-I heterojunction, a triangular quantum well is formed, in which electrons are confined to bound energy states. These bound energy states form a 2DEG. Due to …
Continue reading at www.taylorfrancis.com (other versions)

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