[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Duan et al., 2019 - Google Patents

A physics-based lumped-charge model for SiC MPS diode implemented in PSPICE

Duan et al., 2019

Document ID
11579584637330812400
Author
Duan Y
Xiao F
Jia Y
Luo Y
Liu B
Publication year
Publication venue
IEEE Journal of Emerging and Selected Topics in Power Electronics

External Links

Snippet

This paper presents a physical lumped-charge model for an SiC merged pin Schottky (MPS) diode. According to the MPS chip configuration, this paper divides the model into two parts: the bipolar subcircuit and the unipolar subcircuit. Both the two parts are modeled by the …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods

Similar Documents

Publication Publication Date Title
Tsibizov et al. Accurate temperature estimation of sic power mosfet s under extreme operating conditions
Romano et al. A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
Eleffendi et al. Application of Kalman filter to estimate junction temperature in IGBT power modules
Hu et al. The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
Jia et al. PSpice-COMSOL-based 3-D electrothermal–mechanical modeling of IGBT power module
Hoffmann et al. Evaluation of the VSD‐method for temperature estimation during power cycling of SiC‐MOSFETs
Breglio et al. Experimental detection and numerical validation of different failure mechanisms in IGBTs during unclamped inductive switching
Bonyadi et al. Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs
Duan et al. A physics-based lumped-charge model for SiC MPS diode implemented in PSPICE
Tong et al. Origins of soft-switching C oss losses in SiC power MOSFETs and diodes for resonant converter applications
Duan et al. A lumped-charge approach based physical SPICE-model for high power soft-punch through IGBT
Qi et al. Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications
Deng et al. Correction of delay-time-induced maximum junction temperature offset during electrothermal characterization of IGBT devices
Du et al. Estimating junction temperature of SiC MOSFET using its drain current during turn-on transient
Shi et al. Junction temperature measurement method for SiC bipolar junction transistor using base–collector voltage drop at low current
Yin et al. Electro-thermal modeling of SiC power devices for circuit simulation
Duan et al. A new lumped-charge modeling method for power semiconductor devices
Ceccarelli et al. Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions
Pascal et al. Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters
Jedidi et al. A novel approach to extract the thyristor design parameters for designing of power electronic systems
Borghese et al. Statistical electrothermal simulation for lifetime prediction of parallel SiC MOSFETs and modules
Li et al. A lumped-charge model for high-power PT-pin diode with a buffer layer
Wang et al. An improved SPICE model of SiC BJT incorporating surface recombination effect
Li et al. Analysis and modeling of Sic MPS diode and its parasitic oscillation
Jia et al. Modeling method for electrothermal cosimulation of high‐power IGBT