[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Steinert et al., 2016 - Google Patents

Registration performance on EUV masks using high-resolution registration metrology

Steinert et al., 2016

Document ID
11495821896811936544
Author
Steinert S
Solowan H
Park J
Han H
Beyer D
Scherübl T
Publication year
Publication venue
Photomask Technology 2016

External Links

Snippet

Next-generation lithography based on EUV continues to move forward to high-volume manufacturing. Given the technical challenges and the throughput concerns a hybrid approach with 193 nm immersion lithography is expected, at least in the initial state. Due to …
Continue reading at www.spiedigitallibrary.org (other versions)

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
    • G03F7/70625Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management and control, including software
    • G03F7/705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
    • G03F7/70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/14Originals characterised by structural details, e.g. supports, cover layers, pellicle rings
    • G03F1/144Auxiliary patterns; Corrected patterns, e.g. proximity correction, grey level masks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00Digital computing or data processing equipment or methods, specially adapted for specific functions

Similar Documents

Publication Publication Date Title
Wright et al. New approaches for scatterometry-based metrology for critical distance and overlay measurement and process control
Kim et al. Improving full-wafer on-product overlay using computationally designed process-robust and device-like metrology targets
Capelli et al. Aerial image based metrology of EUV masks: recent achievements, status, and outlook for the AIMS EUV platform
Finders The impact of mask 3D and resist 3D effects in optical lithography
Steinert et al. Registration performance on EUV masks using high-resolution registration metrology
Weiss et al. Actinic review of EUV masks: first results from the AIMS EUV system integration
Rankin et al. EUV photomask defects: what prints, what doesn't, and what is required for HVM
Hellweg et al. Actinic review of EUV masks: performance data and status of the AIMS EUV system
Lawliss et al. Repairing native defects on EUV mask blanks
van Lare et al. Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography
Park et al. Improvement of inter-field CDU by using on-product focus control
Dettoni et al. Image based overlay measurement improvements of 28nm FD-SOI CMOS front-end critical steps
Smilde et al. Target design optimization for overlay scatterometry to improve on-product overlay
Gallagher et al. Learning from native defects on EUV mask blanks
Capelli et al. AIMS™ EUV tool platform: aerial-image based qualification of EUV masks
Jo et al. SEM ADI on device overlay: the advantages and outcome
Leray Metrology challenges for in-line process control
Timmermans et al. Alternative absorber materials for mitigation of mask 3D effects in high NA EUV lithography
Lee et al. Overlay measurement accuracy enhancement by design and algorithm
Seki et al. Printability of buried extreme ultraviolet lithography photomask defects
Seki et al. ENDEAVOUR to understand EUV buried defect printability
Hendrickx et al. Image placement error: closing the gap between overlay and imaging
Capelli et al. Scanner arc illumination and impact on EUV photomasks and scanner imaging
Chou et al. Mask contribution to intra-field wafer overlay
van Haren et al. Direct correlation between mask registration and on-wafer measurements for individual logic device features