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Tanaka et al., 2024 - Google Patents

InGaAs/GaAsSb type-II quantum well photodetectors with quantum wells barrier layer for reducing dark current

Tanaka et al., 2024

Document ID
11382603319493969667
Author
Tanaka T
Gozu S
Sano M
Kanaori M
Shibuya T
Igarashi Y
Oda N
Yuge R
Publication year
Publication venue
Infrared Technology and Applications L

External Links

Snippet

We fabricated extended SWIR photodetectors with cutoff wavelength of 2.3 μm by using lattice-matched InGaAs/GaAsSb type-II quantum wells as an absorption layer. The 100-pair InGaAs/GaAsSb quantum wells and InGaAs as a cap layer were grown on an n-type InP …
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