[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Li et al., 2021 - Google Patents

Review of anisotropic 2D materials: controlled growth, optical anisotropy modulation, and photonic applications

Li et al., 2021

Document ID
11353729469209130506
Author
Li X
Liu H
Ke C
Tang W
Liu M
Huang F
Wu Y
Wu Z
Kang J
Publication year
Publication venue
Laser & Photonics Reviews

External Links

Snippet

Anisotropic 2D materials are promising building blocks for future photonic and optoelectronic devices due to their low structural symmetry and in‐plane optical anisotropy. This review systematically summarizes the crystalline structure, growth dynamics, optical …
Continue reading at onlinelibrary.wiley.com (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods

Similar Documents

Publication Publication Date Title
Li et al. Review of anisotropic 2D materials: controlled growth, optical anisotropy modulation, and photonic applications
Sarkar et al. Recent advances in 2D metal monochalcogenides
Zhang et al. Second harmonic generation in 2D layered materials
Li et al. Anisotropy of excitons in two-dimensional perovskite crystals
Mu et al. Interface and surface engineering of black phosphorus: a review for optoelectronic and photonic applications
Zheng et al. Light emission properties of 2D transition metal dichalcogenides: fundamentals and applications
Carvalho et al. Phosphorene: from theory to applications
Lan et al. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices
Zhou et al. Recent advances in black phosphorus-based photonics, electronics, sensors and energy devices
Cong et al. Optical properties of 2D semiconductor WS2
Wang et al. Optical properties of black phosphorus
Ponraj et al. Photonics and optoelectronics of two-dimensional materials beyond graphene
Hu et al. Two-dimensional black phosphorus: its fabrication, functionalization and applications
Zhang et al. Layer‐Dependent Electronic and Optical Properties of 2D Black Phosphorus: Fundamentals and Engineering
Yu et al. High-yield exfoliation of monolayer 1T’-MoTe2 as saturable absorber for ultrafast photonics
Song et al. Complex optical conductivity of two-dimensional MoS2: A striking layer dependency
Gao et al. Fabrication, optical properties, and applications of twisted two-dimensional materials
Gao et al. Novel two-dimensional monoelemental and ternary materials: growth, physics and application
Ginley et al. Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators
Lee et al. Optical inspection of 2D materials: from mechanical exfoliation to wafer‐scale growth and beyond
Rong et al. The interaction of 2D materials with circularly polarized light
Ho et al. Nanowire grid polarization and polarized excitonic emission observed in multilayer GaTe
Huang et al. Second harmonic generation control in 2D layered materials: status and outlook
Krishnamoorthy et al. Topological insulator metamaterials
Puebla et al. Apparent colors of 2D materials