Liu et al., 2019 - Google Patents
Suppression of non-radiative recombination toward high efficiency perovskite light-emitting diodesLiu et al., 2019
View HTML- Document ID
- 11280532173176998652
- Author
- Liu Y
- Wu T
- Liu Y
- Song T
- Sun B
- Publication year
- Publication venue
- APL Materials
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Snippet
Nickel oxide (NiO) would be an alternative hole transport layer for perovskite light-emitting diodes (PeLEDs). However, the performances of NiO-based PeLEDs are still inferior due to the adverse non-radiative recombination at the interface. Here, a poly (9 …
- 238000005215 recombination 0 title abstract description 26
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- H—ELECTRICITY
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/52—Details of devices
- H01L51/5203—Electrodes
- H01L51/5206—Anodes, i.e. with high work-function material
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/5012—Electroluminescent [EL] layer
- H01L51/5016—Triplet emission
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- H—ELECTRICITY
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
- H01L51/5088—Carrier injection layer
- H01L51/5092—Electron injection layer
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- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0077—Coordination compounds, e.g. porphyrin
- H01L51/0079—Metal complexes comprising a IIIB-metal (B, Al, Ga, In or TI), e.g. Tris (8-hydroxyquinoline) gallium (Gaq3)
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