[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Hasebe et al., 2014 - Google Patents

50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Hasebe et al., 2014

Document ID
11259624739980287880
Author
Hasebe K
Sato T
Takeda K
Fujii T
Kakitsuka T
Matsuo S
Publication year
Publication venue
2014 The European Conference on Optical Communication (ECOC)

External Links

Snippet

We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation; Circuits therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting lasers (SE-lasers)
    • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S2301/00—Functional characteristics

Similar Documents

Publication Publication Date Title
US5680411A (en) Integrated monolithic laser-modulator component with multiple quantum well structure
Ramdane et al. Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission
JP5170236B2 (en) Waveguide type semiconductor optical modulator and manufacturing method thereof
US11693178B2 (en) Monolithic integrated quantum dot photonic integrated circuits
Simoyama et al. 50-Gbps direct modulation using 1.3-μm AlGaInAs MQW distribute-reflector lasers
JP2019054107A (en) Semiconductor optical element
JP5801589B2 (en) Light modulation element
JP2019008179A (en) Semiconductor optical element
US6574258B2 (en) Semiconductor laser having an active layer provided between two different conduction types of semiconductor layers, and optical modules and communication systems formed therewith
US7787736B2 (en) Semiconductor optoelectronic waveguide
Hasebe et al. High-speed modulation of lateral pin diode structure electro-absorption modulator integrated with DFB laser
Stegmueller et al. 15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer
Luo et al. 2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure
JP5483655B1 (en) Optical storage device
Dupuis et al. 10-Gb/s AlGaInAs colorless remote amplified modulator by selective area growth for wavelength agnostic networks
Hasebe et al. 50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser
Stegmueller et al. Integrated 1.3-μm DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance
JP4105618B2 (en) Semiconductor optical modulation waveguide
US20210184421A1 (en) Semiconductor Optical Element
Bimberg et al. Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications
Hasebe et al. Error-free 25-Gbit/s direct modulation of lateral-current-injection DFB laser
Fujii et al. Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2/Si substrate
Chen et al. Two stacks of MQW for fabricating high-speed electro-absorption modulator integrated DFB laser
Knodl et al. Integrated 1.3-µm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
JP2019007997A (en) Semiconductor optical element