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Panigrahy et al., 2013 - Google Patents

Performance enhancement and reduction of short channel effects of nano-MOSFET by using graded channel engineering

Panigrahy et al., 2013

Document ID
11057384657576457908
Author
Panigrahy S
Sahu P
Publication year
Publication venue
2013 International Conference on Circuits, Power and Computing Technologies (ICCPCT)

External Links

Snippet

The effect of the structure on electrical parameters of short channel Double-Gate Metal- Oxide-Semiconductor Field-Effect Transistors (DG MOSFETs) has been explored. To quantitatively assess the nanoscale DG MOSFET's characteristics, the On current (I on), Off …
Continue reading at ieeexplore.ieee.org (other versions)

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