Wilk, 2007 - Google Patents
Switchable THz reflectorsWilk, 2007
- Document ID
- 10962100625604176970
- Author
- Wilk R
- Publication year
External Links
- 230000003287 optical 0 abstract description 105
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infra-red light using far infra-red light; using Terahertz radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/396—Type of laser source
- G01N2021/399—Diode laser
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colour
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infra-red, visible or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam with frequency components different from those of the incident light beams is generated
- G02F1/3544—Particular phase matching techniques
- G02F2001/3548—Quasi-phase-matching [QPM], e.g. using a periodic domain inverted structure
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Mickan et al. | T-ray sensing and imaging | |
Benicewicz et al. | Scaling of terahertz radiation from large-aperture biased photoconductors | |
Wu et al. | Design and characterization of traveling-wave electrooptic terahertz sensors | |
Tani et al. | Generation of terahertz radiation by photomixing with dual-and multiple-mode lasers | |
Rostami et al. | Terahertz technology: fundamentals and applications | |
US8809092B2 (en) | Generating and detecting radiation | |
Bacon et al. | Photoconductive arrays on insulating substrates for high-field terahertz generation | |
Brown | Advancements in photomixing and photoconductive switching for THz spectroscopy and imaging | |
Mag-Usara et al. | Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy | |
EP1535051A1 (en) | Terahertz spectroscopy | |
Angrisani et al. | THz measurement systems | |
Jördens et al. | All-semiconductor laser driven terahertz time-domain spectrometer | |
Loata | Investigation of low-temperature-grown GaAs photoconductive antennae for continuous-wave and pulsed terahertz generation | |
Deninger | State-of-the-art in terahertz continuous-wave photomixer systems | |
Wilk | Switchable THz reflectors | |
Khalili et al. | Microstructured large-area photoconductive terahertz emitters driven at high average power | |
Barnes | Terahertz emission from ultrafast lateral diffusion currents within semiconductor devices | |
Iwaszczuk | Terahertz technology for defense and security-related applications | |
Hatem | Electro-optically induced and manipulated terahertz waves from Fe-doped InGaAs surfaces | |
Sengupta | Characterization of terahertz emission from high resistivity Fe-doped bulk Ga0. 69In0. 31As based photoconducting antennas | |
Wu | Towards Actively Mode-locked Terahertz Quantum-cascade VECSELs | |
Shen | Terahertz time-domain characterization of amplifying quantum cascade metasurface | |
Freese et al. | Multi-channel detection of ultrashort THz-pulses based on photoconductive antennas | |
Bello | Realisation of an efficient Terahertz source using Quantum dot devices | |
Blanchard et al. | The dawn of ultrafast nonlinear optics in the terahertz regime |