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Nitta et al., 2002 - Google Patents

Mass transport of AlxGa1—xN

Nitta et al., 2002

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Document ID
10767667526621727137
Author
Nitta S
Yukawa Y
Watanabe Y
Kamiyama S
Amano H
Akasaki I
Publication year
Publication venue
physica status solidi (a)

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Snippet

AlxGa1—xN having square trenches on its surface showed a different mass transport (MT) property for each AlN molar fraction. We also found that the MT process was interrupted at a certain stage, after which no MT occurred. The volume of the transported region decreased …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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