[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Rodal et al., 2021 - Google Patents

An adaptive current source gate driver for SiC MOSFETs with double gate current injection

Rodal et al., 2021

Document ID
10767263428851273423
Author
Rodal G
Peftitsis D
Publication year
Publication venue
PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

External Links

Snippet

This paper presents the design and operating principles of a novel current-source gate driver for Silicon Carbide metal oxide semiconductor field-effect transistors with adaptive functionalities that aims to improve controllability of di/dt and dv/dt compared to conventional …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K7/00—Modulating pulses with a continuously-variable modulating signal
    • H03K7/08—Duration or width modulation Duty cycle modulation
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Similar Documents

Publication Publication Date Title
CN111404529B (en) Segmented direct gate driving circuit of depletion type GaN power device
US6208185B1 (en) High performance active gate drive for IGBTs
Lobsiger et al. Closed-loop IGBT gate drive featuring highly dynamic di/dt and dv/dt control
John et al. High-performance active gate drive for high-power IGBT's
Chen et al. Closed-loop gate drive for high power IGBTs
CN111211762B (en) SiC MOSFET driving circuit with high turn-on performance
CN113228484B (en) Gate active control circuit and method and SiC MOSFET gate active control system
Wang et al. Switching performance improvement of IGBT modules using an active gate driver
Wang et al. Crosstalk suppression in a 650-V GaN FET bridgeleg converter using 6.7-GHz active gate driver
Paredes et al. A novel active gate driver for silicon carbide MOSFET
CN113098240A (en) Drive circuit of Cascode type GaN power device
Palmer et al. SiC MOSFETs connected in series with active voltage control
Rabkowski et al. A simple high-performance low-loss current-source driver for SiC bipolar transistors
CN109842279A (en) A kind of SiC MOSFET open loop initiative driving circuit
CN113497610A (en) Gate drive circuit capable of reducing conduction loss of power semiconductor
Zhou et al. Variable turn-OFF gate voltage drive for voltage balancing of high-speed SiC MOSFETs in series-connection
WO2022227077A1 (en) Driver circuit and driving system
Rodal et al. An adaptive current source gate driver for SiC MOSFETs with double gate current injection
Zhang et al. A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy
Jiang et al. A new active gate driver for MOSFET to suppress turn-off spike and oscillation
Jones et al. Active gate drive to increase the power capacity of hard-switched IGBTs
Zhang et al. Active gate charge control strategy for series-connected IGBTs
Rafiq et al. A resonant gate driver circuit with turn-on and turn-off dv/dt control
Tan et al. Evaluation of active current source gate driver for IGBT module switching transitions
Ivaniš et al. An Overview of Advanced Gate Driver Concepts for SiC Semiconductors