[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Chishti et al., 2009 - Google Patents

Improving cache lifetime reliability at ultra-low voltages

Chishti et al., 2009

View PDF
Document ID
10752823997739959804
Author
Chishti Z
Alameldeen A
Wilkerson C
Wu W
Lu S
Publication year
Publication venue
Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture

External Links

Snippet

Voltage scaling is one of the most effective mechanisms to reduce microprocessor power consumption. However, the increased severity of manufacturing-induced parameter variations at lower voltages limits voltage scaling to a minimum voltage, Vccmin, below …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1064Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in cache or content addressable memories
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106Correcting systematically all correctable errors, i.e. scrubbing
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/1016Error in accessing a memory location, i.e. addressing error
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0721Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment within a central processing unit [CPU]
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/14Error detection or correction of the data by redundancy in operation
    • G06F11/1402Saving, restoring, recovering or retrying
    • G06F11/1405Saving, restoring, recovering or retrying at machine instruction level
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0766Error or fault reporting or storing
    • G06F11/0775Content or structure details of the error report, e.g. specific table structure, specific error fields
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/16Error detection or correction of the data by redundancy in hardware
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38Response verification devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125Cells incorporating circuit means for protection against loss of information
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F2201/00Indexing scheme relating to error detection, to error correction, and to monitoring

Similar Documents

Publication Publication Date Title
Chishti et al. Improving cache lifetime reliability at ultra-low voltages
Alameldeen et al. Energy-efficient cache design using variable-strength error-correcting codes
Wilkerson et al. Reducing cache power with low-cost, multi-bit error-correcting codes
Kim et al. Multi-bit error tolerant caches using two-dimensional error coding
Kim et al. Bamboo ECC: Strong, safe, and flexible codes for reliable computer memory
Asadi et al. Balancing performance and reliability in the memory hierarchy
Abella et al. Low vccmin fault-tolerant cache with highly predictable performance
Alameldeen et al. Adaptive cache design to enable reliable low-voltage operation
US8190982B2 (en) Error-tolerant multi-threaded memory systems with reduced error accumulation
Sridharan et al. Reducing data cache susceptibility to soft errors
Duwe et al. Correction prediction: Reducing error correction latency for on-chip memories
Duwe et al. Rescuing uncorrectable fault patterns in on-chip memories through error pattern transformation
Farbeh et al. ECC-United Cache: Maximizing efficiency of error detection/correction codes in associative cache memories
Zhang Enhancing data cache reliability by the addition of a small fully-associative replication cache
Chen et al. E-ecc: Low power erasure and error correction schemes for increasing reliability of commodity dram systems
Lee et al. ECMO: ECC Architecture Reusing Content-Addressable Memories for Obtaining High Reliability in DRAM
Yalcin et al. Flexicache: Highly reliable and low power cache under supply voltage scaling
Chen et al. Using low cost erasure and error correction schemes to improve reliability of commodity DRAM systems
Gold et al. Mitigating multi-bit soft errors in L1 caches using last-store prediction
Longofono et al. Predicting and mitigating single-event upsets in DRAM using HOTH
Amrouch et al. Self-immunity technique to improve register file integrity against soft errors
Choi et al. Matching cache access behavior and bit error pattern for high performance low Vcc L1 cache
Wang et al. Improving 3D DRAM fault tolerance through weak cell aware error correction
Lu et al. Architectural-level error-tolerant techniques for low supply voltage cache operation
Giterman et al. Improving energy-efficiency in dynamic memories through retention failure detection