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Shur et al., 1999 - Google Patents

GaN-based electronic devices

Shur et al., 1999

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Document ID
10740884323618706507
Author
Shur M
Gaska R
Bykhovski A
Publication year
Publication venue
Solid-State Electronics

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Snippet

We review the parameters and performance of GaN-based pyroelectric and piezoelectric sensors and report on the characteristics of GaN-based High Electron Mobility Transistors (HEMTs) grown on 4H-SiC substrates. The piezoelectric and pyroelectric devices can …
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