[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Fard et al., 2013 - Google Patents

Design and fabrication of hydrogen sulfide (H2S) gas sensor using PtSi/porous n-Si Schottky diode

Fard et al., 2013

View PDF
Document ID
10687113340398399681
Author
Fard H
Khatami S
Izadi N
Koohsorkhi J
Rashidi A
Publication year
Publication venue
Sens. Mater

External Links

Snippet

Hydrogen sulfide (H2S) is a colorless, flammable, and very poisonous gas with the odor of rotten eggs at concentrations up to 100 parts per million (ppm). H2S is most commonly obtained by its separation from sour gas, which is natural gas with a high content of H2S …
Continue reading at sensors.myu-group.co.jp (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by the preceding groups
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—Specially adapted to detect a particular component
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • G01N27/048—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance for determining moisture content of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/22—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the ionisation of gases; by investigating electric discharges, e.g. emission of cathode
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor

Similar Documents

Publication Publication Date Title
Ahn et al. Self-heated silicon nanowires for high performance hydrogen gas detection
Zhou et al. Nano‐Newton transverse force sensor using a vertical GaN nanowire based on the piezotronic effect
Trinh et al. Improving the ethanol sensing of ZnO nano-particle thin films—the correlation between the grain size and the sensing mechanism
Hernandez‐Ramirez et al. Insight into the role of oxygen diffusion in the sensing mechanisms of SnO2 nanowires
US9453811B2 (en) Asymmetric bottom contacted device
US10191004B2 (en) Microcantilever based selective volatile organic compound (VOC) sensors and methods
Fattah et al. Selective H 2 S gas sensing with a graphene/n-Si Schottky diode
Zhong et al. Comparative study of Schottky diode type hydrogen sensors based on a honeycomb GaN nanonetwork and on a planar GaN film
Jang et al. Highly sensitive hydrogen sensors: Pd-coated Si nanowire arrays for detection of dissolved hydrogen in oil
Hou et al. Self-biased ZnO nanowire humidity sensor vertically integrated on triple junction solar cell
Barillaro et al. A silicon crystalline resistor with an adsorbing porous layer as gas sensor
Schäfer et al. Electrical transport properties of Ge-doped GaN nanowires
Qin et al. KOH post-etching-induced rough silicon nanowire array for H2 gas sensing application
Anwar et al. Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope
Fard et al. Design and fabrication of hydrogen sulfide (H2S) gas sensor using PtSi/porous n-Si Schottky diode
Gabouze et al. CO2 and H2 detection with a CHx/porous silicon-based sensor
Tsai et al. Comprehensive study on hydrogen sensing properties of a Pd–AlGaN-based Schottky diode
JP6316798B2 (en) Determination of interstitial oxygen concentration in semiconductor samples.
Zhang et al. Observation of threshold voltage instabilities in AlGaN/GaN MIS HEMTs
Sellai et al. Barrier height and interface characteristics of Au/Mn5Ge3/Ge (1 1 1) Schottky contacts for spin injection
Fobelets et al. Ammonia sensing using arrays of silicon nanowires and graphene
Andringa et al. Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors
RU133312U1 (en) GAS SENSOR BASED ON HYBRID NANOMATERIALS
Alivov et al. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes
Korolev et al. Porous silicon is for environmental monitoring sensors