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Hino et al., 2007 - Google Patents

Fabrication and characterization of 4H-SiC MOSFET with MOCVD-grown Al2O3 gate insulator

Hino et al., 2007

Document ID
10570387577996193599
Author
Hino S
Hatayama T
Miura N
Oomori T
Tokumitsu E
Publication year
Publication venue
Materials science forum

External Links

Snippet

We have fabricated and characterized MOS capacitors and lateral MOSFETs using Al2O3 as a gate insulator. Al2O3 films were deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures as low as 190 oC using tri-ethyl-aluminum and H2O as …
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