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Ohguro et al., 1997 - Google Patents

0.18/spl mu/m low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

Ohguro et al., 1997

Document ID
10425474505464256973
Author
Ohguro T
Naruse H
Sugaya H
Morifuji E
Nakamura S
Yoshitomi T
Morimoto T
Momose H
Katsumata Y
Iwai H
Publication year
Publication venue
International Electron Devices Meeting. IEDM Technical Digest

External Links

Snippet

We introduce 0.18/spl mu/m CMOS with multi-V/sub th/'s for mixed high-speed digital and RF- analog applications. The V/sub th/'s of MOSFETs for digital circuits are 0.4 V for NMOS and- 0.4 V for PMOS, respectively. In addition, there are n-MOSFETs with zero-volt-Vth for RF …
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