[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Zakar et al., 2001 - Google Patents

Process and fabrication of a lead zirconate titanate thin film pressure sensor

Zakar et al., 2001

Document ID
1048102425685742999
Author
Zakar E
Dubey M
Piekarski B
Conrad J
Piekarz R
Widuta R
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

External Links

Snippet

Lead zirconate titanate (PZT) ferroelectric material is highly attractive for sensor and actuator device applications. Static pressure sensor structures were fabricated using sol-gel deposited PZT spin coated onto Pt/SiO 2/Si substrates, with the platinum layer forming the …
Continue reading at pubs.aip.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
    • H01L41/314Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
    • H01L41/316Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/08Piezo-electric or electrostrictive devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions

Similar Documents

Publication Publication Date Title
CN100530735C (en) Process for fabricating piezoelectric element
TW554557B (en) Method of forming noble metal thin film pattern
US7738237B2 (en) Tunable inter-digital capacitor and method of manufacturing the same
EP0402986B1 (en) Manufacture of electrical transducer devices, particularly infrared detector arrays
US7169623B2 (en) System and method for processing a wafer including stop-on-aluminum processing
EP3306951A2 (en) Microphone and method for manufacturing the same
CN111869103A (en) Method for forming aluminum nitride layer
Zakar et al. Process and fabrication of a lead zirconate titanate thin film pressure sensor
US9157378B2 (en) Method for manufacturing piezoelectric element and piezoelectric element manufactured using same
WO2022048382A1 (en) Mems structure
Kathiresan et al. Optimization of piezoelectric MEMS process on Sr and La co-doped PZT thin films
Zeto et al. Dry etching of sol-gel PZT
Kokaze et al. Dry etching process for Pb (Zr, Ti) O3 thin-film actuators
Gross et al. Reliable integration of piezoelectric lead zirconate titanate with MEMS fabrication processes
JP3458493B2 (en) Piezoelectric sensor element and method of manufacturing the same
Kathiresan et al. Key issues and challenges in device level fabrication of MEMS acoustic sensors using piezo thin films doped with strontium and lanthanum
JP2003322662A (en) Electronic device and its manufacturing method
JP2000138401A (en) Piezoelectric detector and its manufacture
Chauhan et al. Fabrication of cantilever MEMs structure of C-axis grown AlN film for energy harvester application
Gurin et al. Low-dimensional heterostructures obtaining from an intelligent material and carbon material on a silicon
Suharyadi The influence of substrate bias and sputtering pressure on the deposited aluminium nitride for magnetoelectric sensors
Novotny et al. Piezoelectric ZnO thin films prepared by cyclic sputtering and etching technology
Roshchin et al. Effect of bottom-electrode morphology on the dielectric characteristics of the metal-ferroelectric-metal planar structure
JP2006332368A (en) Piezoelectric thin film element and its manufacturing method
Koochekzadeh et al. Thermal Effects of Platinum Bottom Electrodes on PZT Sputtered Thin Films Used in MEMS Devices