[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Poulton et al., 1995 - Google Patents

A 6-b, 4 GSa/s GaAs HBT ADC

Poulton et al., 1995

Document ID
10358236440100487409
Author
Poulton K
Knudsen K
Corcoran J
Wang K
Nubling R
Pierson R
Chang M
Asbeck P
Huang R
Publication year
Publication venue
IEEE Journal of Solid-State Circuits

External Links

Snippet

A GaAs-AlGaAs heterojunction bipolar transistor (HBT) process was developed to meet the speed, gain, and yield requirements for analog-to-digital converters (ADC's). The HBT has current gain of over 100 and f/sub T/and f/sub MAX/of over 50 GHz. A 6-b, 4 GSa/s (4 giga …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00Digital computing or data processing equipment or methods, specially adapted for specific functions

Similar Documents

Publication Publication Date Title
Poulton et al. A 6-b, 4 GSa/s GaAs HBT ADC
Rein et al. Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
Poulton et al. A 1-GHz 6-bit ADC system
Li et al. Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz
Baumheinrich et al. A 1-GSample/s 10-b full Nyquist silicon bipolar Track&Hold IC
Nosaeva et al. Improved thermal management of InP transistors in transferred‐substrate technology with diamond heat‐spreading layer
Ishii et al. Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops
Rabaey et al. Embedding mixed-signal design in systems-on-chip
Poulton et al. A 6-bit, 4 GSa/s ADC fabricated in a GaAs HBT process
Kent et al. A high purity, high speed direct digital synthesizer
Otsuji A picosecond-accuracy, 700-MHz range, Si bipolar time interval counter LSI
Yoshii et al. An 8 bit, 100 MS/s flash ADC
De Vreede et al. Advanced modeling of distortion effects in bipolar transistors using the Mextram model
Chang et al. GaAs HBT's for high-speed digital integrated circuit applications
Garuts et al. A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter using a 70-ps silicon bipolar technology with borosenic-poly process and coupling-base implant
Saul et al. An 8-bit, 5 ns monolithic D/A converter subsystem
Otsuji et al. A 3-ns range, 8-ps resolution, timing generator LSI utilizing Si bipolar gate array
Rosker et al. The DARPA compound semiconductor materials on silicon (COSMOS) program
Haralabidis et al. A CMOS laser driver with independently adjustable DC and modulation currents for data rates up to 2.5 Gb/s
Freeman et al. 40 Gbit/sec circuits built from a 120 GHz f/sub T/SiGe technology
Thompson et al. An 8-bit 2-gigasample/second A/D converter multichip module for digital receiver demonstration on Navy AN/APS-145 E2-C airborne early warning aircraft radar
Yu et al. A 1 GS/s, 11-b track-and-hold amplifier with< 0.1 dB gain loss
Corcoran et al. GaAs HBTs: an analog circuit design perspective
Gorman et al. High performance sample-and-hold implemented with GaAs/AlGaAs heterojunction bipolar transistor technology
Oehler et al. A 3.6 gigasample/s 5 bit analog to digital converter using 0.3/spl mu/m AlGaAs-HEMT technology