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Das et al., 2014 - Google Patents

Interfacial bonding characteristics between graphene and dielectric substrates

Das et al., 2014

Document ID
10229722702429997100
Author
Das S
Lahiri D
Agarwal A
Choi W
Publication year
Publication venue
Nanotechnology

External Links

Snippet

Achieving strong adhesion between graphene and SiO x/Si substrates is crucial to make reliable graphene based electronics and electro-optic devices. We report the enhanced adhesion energy by vacuum annealing and the quantification of graphene-SiO x/Si …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene

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