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Xu et al., 2000 - Google Patents

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

Xu et al., 2000

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Document ID
10125413873959611679
Author
Xu J
Keller S
Parish G
Heikman S
Mishra U
York R
Publication year
Publication venue
IEEE Transactions on Microwave Theory and Techniques

External Links

Snippet

In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit …
Continue reading at www.researchgate.net (PDF) (other versions)

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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H01L2924/1304—Transistor
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