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Fang et al., 1992 - Google Patents

An amorphous SiC/Si heterojunction pin diode for low-noise and high-sensitivity UV detector

Fang et al., 1992

Document ID
10111264670570503503
Author
Fang Y
Hwang S
Chen K
Liu C
Tsai M
Kuo L
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

The authors report the UV photoresponse of an a-SiC/a-Si heterojunction pin diode with the structure of glass/TCO (transparent conducting oxide, SnO/sub 2/: F)/pa-SiC: H/ia-Si: H/na- Si: H/Al. The diode has been designed for a high-sensitivity and low-noise UV detector. The …
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