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Ishikawa et al., 2008 - Google Patents

MOCVD growth of GaN on porous silicon substrates

Ishikawa et al., 2008

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Document ID
1001418817230680615
Author
Ishikawa H
Shimanaka K
Tokura F
Hayashi Y
Hara Y
Nakanishi M
Publication year
Publication venue
Journal of Crystal Growth

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Snippet

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

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