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Kiyota et al., 2000 - Google Patents

Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping

Kiyota et al., 2000

Document ID
10085899107978034674
Author
Kiyota Y
Kikuchi T
Washio K
Inada T
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

The shallow intrinsic base region of a double poly-Si self-aligned bipolar transistor was formed by rapid vapor-phase doping (RVD) in order to increase the high-frequency performance, compared to that provided by low-energy BF 2 ion implantation. RVD …
Continue reading at iopscience.iop.org (other versions)

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