[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Oettinger et al., 1976 - Google Patents

Thermal characterization of power transistors

Oettinger et al., 1976

Document ID
10052560060113451314
Author
Oettinger F
Blackburn D
Rubin S
Publication year
Publication venue
IEEE Transactions on electron devices

External Links

Snippet

The idealized concept of thermal resistance as applied to power transistors is discussed. This concept must be used with care because two of the basic assumptions made in applying the concept to these devices are not valid. Contrary to these assumptions, it is …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00—Measuring quantity of heat
    • G01K17/06—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
    • G01K17/08—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
    • G01K17/20—Measuring quantity of heat conveyed by flowing mediums, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature across a radiating surface, combined with ascertainment of the heat transmission coefficient
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/10—Arrangements for compensating for auxiliary variables, e.g. length of lead
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply, e.g. by thermoelectric elements
    • G01K7/42—Circuits for reducing thermal inertia; Circuits for predicting the stationary value of temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric

Similar Documents

Publication Publication Date Title
Oettinger et al. Thermal characterization of power transistors
Székely Enhancing reliability with thermal transient testing
Blackburn An electrical technique for the measurement of the peak junction temperature of power transistors
Smith et al. Second breakdown and damage in junction devices
Avenas et al. Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions–Comparison with infrared measurements
Blackburn et al. Power MOSFET temperature measurements
Hoffmann et al. Evaluation of the VSD‐method for temperature estimation during power cycling of SiC‐MOSFETs
Kloosterman et al. Avalanche multiplication in a compact bipolar transistor model for circuit simulation
Spirito et al. Thermal instabilities in high current power MOS devices: experimental evidence, electro-thermal simulations and analytical modeling
Selmi et al. Modeling temperature effects in the DC IV characteristics of GaAs MESFET's
Schwitter et al. Transient gate resistance thermometry demonstrated on GaAs and GaN FET
CN109211963B (en) System and method for detecting thermal resistance of heat-conducting material
Cain et al. Electrical measurement of the junction temperature of an RF power transistor
Siegal Factors affecting semiconductor device thermal resistance measurements
Negus et al. Thermal modeling and experimental techniques for microwave bipolar devices
Chen et al. Evaluation of thermal performance of packaged GaN HEMT cascode power switch by transient thermal testing
Reisch Self-heating in BJT circuit parameter extraction
Zommer et al. Reliability and thermal impedance studies in soft soldered power transistors
Ceccarelli et al. Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method
Cao et al. Evaluation of the Square-Root-t Method in Junction Temperature Measurement
Mortenson Analysis of the temperature rise in PIN diodes caused by microwave pulse dissipation
Kristensen et al. Characterization and modeling of dynamic thermal coupling in GaN MMIC power amplifiers
Lestina et al. An inverse method to determine the temperature profile on a semiconductor power diode
Li et al. On-line measurement of chip temperature based on blocking leakage current of the insulated-gate bipolar transistor module in the high-temperature reverse-bias test
Nelson et al. Measurement of internal temperature rise of transistors