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Ploog et al., 1991 - Google Patents

Extremely narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers

Ploog et al., 1991

Document ID
1004132683959348703
Author
Ploog K
Fischer A
Tapfer L
Feuerbacher B
Publication year
Publication venue
Applied Physics A

External Links

Snippet

We propose a new method to considerably reduce the overall growth interruption for high- quality GaAs single quantum wells during molecular beam epitaxy. The insertion of ultrathin AlAs smoothing layers at the constituent GaAs/Al x Ga 1− x As heterointerfaces and growth …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates

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