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Tian et al., 2022 - Google Patents

Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials

Tian et al., 2022

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Document ID
9999629629611914171
Author
Tian F
AI L
SUN G
Xu A
HUANG H
GONG Q
QI M
Publication year
Publication venue
红外与毫米波学报

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This paper reports the material characteristics of In0. 66Ga0. 34As/InyAl1-yAs high electron mobility transis⁃ tor (HEMT). The linearly graded InyAl1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy (GSMBE). The influence of InyAl1-yAs …
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