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Sambuco Salomone et al., 2018 - Google Patents

Electron trapping in amorphous Al2O3

Sambuco Salomone et al., 2018

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Document ID
9999097500628701145
Author
Sambuco Salomone L
Campabadal F
Faigón A
Publication year
Publication venue
Journal of Applied Physics

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Snippet

The electron trapping in MOS capacitors with amorphous Al 2 O 3 as an insulating layer was studied through pulsed capacitance-voltage technique. A positive shift of the voltage value corresponding to a constant capacitance (VC) was observed. The dependences of the …
Continue reading at notablesdelaciencia.conicet.gov.ar (PDF) (other versions)

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