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Lee et al., 2018 - Google Patents

Influence of channel layer thickness on the instability of amorphous SiZnSnO thin film transistors under negative bias temperature stress

Lee et al., 2018

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Document ID
9912008615411204414
Author
Lee B
Lee S
Publication year
Publication venue
physica status solidi (a)

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In this study, amorphous silicon‐zinc‐tin‐oxide thin film transistors (a‐SZTO TFTs) are fabricated by radio‐frequency magnetron sputtering at room temperature, and the influence of various channel thicknesses on their electrical performance and stability is reported …
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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