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Makimoto et al., 2004 - Google Patents

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Makimoto et al., 2004

Document ID
9849169905687926182
Author
Makimoto T
Yamauchi Y
Kumakura K
Publication year
Publication venue
Applied physics letters

External Links

Snippet

High-power characteristics have been investigated for GaN/InGaN double heterojunction bipolar transistors (HBTs) on SiC substrates. A base-collector diode showed a high breakdown voltage exceeding 50 V, which is ascribed to a wide band gap of a GaN …
Continue reading at pubs.aip.org (other versions)

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